Origin of half-semimetallicity induced at interfaces of C-BN heterostructures
نویسندگان
چکیده
منابع مشابه
Graphene-BN Heterostructures: An In-Plane Transistor
Graphene-Boron Nitride (G-BN) heterostructures can lead to the realization of nanoscale electronics that will be smaller than the dimensional limit—14 nanometers—of silicon transistors and provide higher mobilities. However, the grapheneboron nitride heterostructure although self-insulating, cannot function as a transistor alone due to not having a second conducting pathway. Thus, the utilizati...
متن کاملInterlayer Potential for Graphene/h-BN Heterostructures.
We present a new force-field potential that describes the interlayer interactions in heterojunctions based on graphene and hexagonal boron nitride (h-BN). The potential consists of a long-range attractive term and a short-range anisotropic repulsive term. Its parameters are calibrated against reference binding and sliding energy profiles for a set of finite dimer systems and the periodic graphe...
متن کاملthe effect of aqueous extract of garlic on formalin-induced pain in male rats
چکیده اثر عصاره آبی سیر بر درد ناشی از آزمون فرمالین در موش صحرایی نر به کوشش نرگس اسکندری روزبهانی زمینه و هدف: گیاه سیر از خانواده لیلیاسه و گونهallium sativum بومی آسیای میانه بوده و از دوران ،باستان تاکنون به خواص درمانی متفاوت آن مثل: کاهندگی قندخون، کلسترول خون، فشار خون، اثرات مفیدآن بر دستگاه قلبی عروقی و بیماریهای انعقادی خون، اثرات آنتی اکسیداتیو، درمان بیماریهای تنفسی وگوارشی، ا...
15 صفحه اولVibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.
Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quali...
متن کاملPostsynthesis of h-BN/Graphene Heterostructures Inside a STEM.
Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in-plane graphene growth from the step-edge of hexagonal BN (h-BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.81.161409